Numerical analysis of nonlinear model of excited carrier decay

Natalija Tumanova; Raimondas Čiegis; Mečislavas Meilūnas

Open Mathematics (2013)

  • Volume: 11, Issue: 6, page 1140-1152
  • ISSN: 2391-5455

Abstract

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This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.

How to cite

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Natalija Tumanova, Raimondas Čiegis, and Mečislavas Meilūnas. "Numerical analysis of nonlinear model of excited carrier decay." Open Mathematics 11.6 (2013): 1140-1152. <http://eudml.org/doc/269022>.

@article{NatalijaTumanova2013,
abstract = {This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.},
author = {Natalija Tumanova, Raimondas Čiegis, Mečislavas Meilūnas},
journal = {Open Mathematics},
keywords = {Nonlinear ODE; Numerical approximation; A priori estimates; Convergence; Model identification; nonlinear ODE; numerical approximation; a priori estimates; convergence; model identification},
language = {eng},
number = {6},
pages = {1140-1152},
title = {Numerical analysis of nonlinear model of excited carrier decay},
url = {http://eudml.org/doc/269022},
volume = {11},
year = {2013},
}

TY - JOUR
AU - Natalija Tumanova
AU - Raimondas Čiegis
AU - Mečislavas Meilūnas
TI - Numerical analysis of nonlinear model of excited carrier decay
JO - Open Mathematics
PY - 2013
VL - 11
IS - 6
SP - 1140
EP - 1152
AB - This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved. The identifiability analysis of the parameters of deep centers is performed and the fitting of the model to experimental data is done by using the genetic optimization algorithm. Results of numerical experiments are presented.
LA - eng
KW - Nonlinear ODE; Numerical approximation; A priori estimates; Convergence; Model identification; nonlinear ODE; numerical approximation; a priori estimates; convergence; model identification
UR - http://eudml.org/doc/269022
ER -

References

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