Macro- and microsimulations for a sublimation growth of SiC single crystals.
Mathematical Problems in Engineering (2009)
- Volume: 2009, page Article ID 716104, 12 p.-Article ID 716104, 12 p.
- ISSN: 1024-123X
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topGeiser, Jürgen, and Irle, Stephan. "Macro- and microsimulations for a sublimation growth of SiC single crystals.." Mathematical Problems in Engineering 2009 (2009): Article ID 716104, 12 p.-Article ID 716104, 12 p.. <http://eudml.org/doc/45888>.
@article{Geiser2009,
author = {Geiser, Jürgen, Irle, Stephan},
journal = {Mathematical Problems in Engineering},
keywords = {crystal growth; vapor transport; sublimation; heat equation; radiation; molecular dynamics},
language = {eng},
pages = {Article ID 716104, 12 p.-Article ID 716104, 12 p.},
publisher = {Hindawi Publishing Corporation, New York},
title = {Macro- and microsimulations for a sublimation growth of SiC single crystals.},
url = {http://eudml.org/doc/45888},
volume = {2009},
year = {2009},
}
TY - JOUR
AU - Geiser, Jürgen
AU - Irle, Stephan
TI - Macro- and microsimulations for a sublimation growth of SiC single crystals.
JO - Mathematical Problems in Engineering
PY - 2009
PB - Hindawi Publishing Corporation, New York
VL - 2009
SP - Article ID 716104, 12 p.
EP - Article ID 716104, 12 p.
LA - eng
KW - crystal growth; vapor transport; sublimation; heat equation; radiation; molecular dynamics
UR - http://eudml.org/doc/45888
ER -
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