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The paper studies the convergence behavior of
Monte Carlo schemes for semiconductors.
A detailed analysis of the systematic error
with respect to numerical parameters is performed.
Different sources of systematic error are pointed out and
illustrated in a spatially one-dimensional test case.
The error with respect to the number of simulation particles
occurs during the calculation of the internal electric field.
The time step error, which is related to the splitting of transport and
electric field...
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