Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices
E. Z. Borevich; V. M. Chistyakov
Applications of Mathematics (2001)
- Volume: 46, Issue: 5, page 383-400
- ISSN: 0862-7940
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topBorevich, E. Z., and Chistyakov, V. M.. "Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices." Applications of Mathematics 46.5 (2001): 383-400. <http://eudml.org/doc/33093>.
@article{Borevich2001,
abstract = {The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.},
author = {Borevich, E. Z., Chistyakov, V. M.},
journal = {Applications of Mathematics},
keywords = {nonlinear boundary value problem; asymptotic behaviour of solutions; semiconductors; carrier transport; constant densities of ionized impurities; interior transition layer phenomena; semiconductors; carrier transport; constant densities of ionized impurities; nonlinear boundary value problem; global bifurcation; stability; interior transition layer phenomena},
language = {eng},
number = {5},
pages = {383-400},
publisher = {Institute of Mathematics, Academy of Sciences of the Czech Republic},
title = {Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices},
url = {http://eudml.org/doc/33093},
volume = {46},
year = {2001},
}
TY - JOUR
AU - Borevich, E. Z.
AU - Chistyakov, V. M.
TI - Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices
JO - Applications of Mathematics
PY - 2001
PB - Institute of Mathematics, Academy of Sciences of the Czech Republic
VL - 46
IS - 5
SP - 383
EP - 400
AB - The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
LA - eng
KW - nonlinear boundary value problem; asymptotic behaviour of solutions; semiconductors; carrier transport; constant densities of ionized impurities; interior transition layer phenomena; semiconductors; carrier transport; constant densities of ionized impurities; nonlinear boundary value problem; global bifurcation; stability; interior transition layer phenomena
UR - http://eudml.org/doc/33093
ER -
References
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