A dual mesh method for a nonlocal thermistor problem.
A model of evolution of temperature and density of ions in an electrolyte
We study existence and nonexistence of solutions (both stationary and evolution) for a parabolic-elliptic system describing the electrodiffusion of ions. In this model the evolution of temperature is also taken into account. For stationary states the existence of an external potential is also assumed.
A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
A new exponentially fitted triangular finite element method for the continuity equations in the drift-diffusion model of semiconductor devices
In this paper we present a novel exponentially fitted finite element method with triangular elements for the decoupled continuity equations in the drift-diffusion model of semiconductor devices. The continuous problem is first formulated as a variational problem using a weighted inner product. A Bubnov-Galerkin finite element method with a set of piecewise exponential basis functions is then proposed. The method is shown to be stable and can be regarded as an extension to two dimensions of the...
A note on a 3-dimensional stationary Schrödinger-Poisson system.
A numerically efficient approach to the modelling of double-Qdot channels
We consider the electronic properties of a system consisting of two quantum dots in physical proximity, which we will refer to as the double-Qdot. Double-Qdots are attractive in light of their potential application to spin-based quantum computing and other electronic applications, e.g. as specialized sensors. Our main goal is to derive the essential properties of the double-Qdot from a model that is rigorous yet numerically tractable, and largely circumvents the complexities of an ab initio simulation....
A problem related to the Hall effect in a semiconductor with an electrode of an arbitrary shape.
Asymptotic stability of an equilibrium for the gas dynamics model of charge transport in semiconductors.
Asymptotic stability of stationary solutions to the drift-diffusion model in the whole space
We study the initial value problem for the drift-diffusion model arising in semiconductor device simulation and plasma physics. We show that the corresponding stationary problem in the whole space ℝn admits a unique stationary solution in a general situation. Moreover, it is proved that when n ≥ 3, a unique solution to the initial value problem exists globally in time and converges to the corresponding stationary solution as time tends to infinity, provided that the amplitude of the stationary solution...