Global existence and extinction of weak solutions to a class of semiconductor equations with fast diffusion terms.
Mathematical modeling of semiconductor quantum dots based on the nonparabolic effective-mass approximation
Within the effective mass and nonparabolic band theory, a general framework of mathematical models and numerical methods is developed for theoretical studies of semiconductor quantum dots. It includes single-electron models and many-electron models of Hartree-Fock, configuration interaction, and current-spin density functional theory approaches. These models result in nonlinear eigenvalue problems from a suitable discretization. Cubic and quintic Jacobi-Davidson methods of block or nonblock version...
Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices
The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
Numerical analysis of nonlinear model of excited carrier decay
This paper presents a mathematical model for photo-excited carrier decay in a semiconductor. Due to the carrier trapping states and recombination centers in the bandgap, the carrier decay process is defined by the system of nonlinear differential equations. The system of nonlinear ordinary differential equations is approximated by linearized backward Euler scheme. Some a priori estimates of the discrete solution are obtained and the convergence of the linearized backward Euler method is proved....
Numerical study of the systematic error in Monte Carlo schemes for semiconductors
The paper studies the convergence behavior of Monte Carlo schemes for semiconductors. A detailed analysis of the systematic error with respect to numerical parameters is performed. Different sources of systematic error are pointed out and illustrated in a spatially one-dimensional test case. The error with respect to the number of simulation particles occurs during the calculation of the internal electric field. The time step error, which is related to the splitting of transport and electric field...
On a nonlinear problem modelling states of thermal equilibrium of superconductors.
On the analytical and numerical treatment of a class of PDE's with the application to some two-valley semiconductor.
Ordered dissipative structures in exciton systems in semiconductor quantum wells.
Peltier effect of superconductor-semiconductor mesoscopic device.
Quantum Euler-Poisson systems: Existence of stationary states
A one-dimensional quantum Euler-Poisson system for semiconductors for the electron density and the electrostatic potential in bounded intervals is considered. The existence and uniqueness of strong solutions with positive electron density is shown for quite general (possibly non-convex or non-monotone) pressure-density functions under a “subsonic” condition, i.e. assuming sufficiently small current densities. The proof is based on a reformulation of the dispersive third-order equation for the electron...
Quantum-dot-based photon emission and media conversion for quantum information applications.
Relaxation-time limits of global solutions in full quantum hydrodynamic model for semiconductors
This paper is concerned with the global well-posedness and relaxation-time limits for the solutions in the full quantum hydrodynamic model, which can be used to analyze the thermal and quantum influences on the transport of carriers in semiconductor devices. For the Cauchy problem in , we prove the global existence, uniqueness and exponential decay estimate of smooth solutions, when the initial data are small perturbations of an equilibrium state. Moreover, we show that the solutions converge into...
Stability of hydrodynamic model for semiconductor
In this paper we study the stability of transonic strong shock solutions of the steady state one-dimensional unipolar hydrodynamic model for semiconductors in the isentropic case. The approach is based on the construction of a pseudo-local symmetrizer and on the paradifferential calculus with parameters, which combines the work of Bony-Meyer and the introduction of a large parameter.
The Child–Langmuir limit for semiconductors : a numerical validation
The Boltzmann–Poisson system modeling the electron flow in semiconductors is used to discuss the validity of the Child–Langmuir asymptotics. The scattering kernel is approximated by a simple relaxation time operator. The Child–Langmuir limit gives an approximation of the current-voltage characteristic curves by means of a scaling procedure in which the ballistic velocity is much larger that the thermal one. We discuss the validity of the Child–Langmuir regime by performing detailed numerical comparisons...
The Child–Langmuir limit for semiconductors: a numerical validation
The Boltzmann–Poisson system modeling the electron flow in semiconductors is used to discuss the validity of the Child–Langmuir asymptotics. The scattering kernel is approximated by a simple relaxation time operator. The Child–Langmuir limit gives an approximation of the current-voltage characteristic curves by means of a scaling procedure in which the ballistic velocity is much larger that the thermal one. We discuss the validity of the Child–Langmuir regime by performing detailed numerical...
The quasineutral limit problem in semiconductors sciences
The mathematical analysis on various mathematical models arisen in semiconductor science has attracted a lot of attention in both applied mathematics and semiconductor physics. It is important to understand the relations between the various models which are different kind of nonlinear system of P.D.Es. The emphasis of this paper is on the relation between the drift-diffusion model and the diffusion equation. This is given by a quasineutral limit from the DD model to the diffusion equation.
Unicité des solutions stationnaires des modèles dérive-diffusion avec génération d'avalanche.